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Improvement of optical transmittance and electrical properties for the Si quantum dot-embedded ZnO thin film
A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs em...
Autores principales: | Kuo, Kuang-Yang, Liu, Chuan-Cheng, Huang, Pin-Ruei, Hsu, Shu-Wei, Chuang, Wen-Ling, Chen, You-Jheng, Lee, Po-Tsung |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3854540/ https://www.ncbi.nlm.nih.gov/pubmed/24148255 http://dx.doi.org/10.1186/1556-276X-8-439 |
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