Gate Length Variation Effect on Performance of Gate-First Self-Aligned In(0.53)Ga(0.47)As MOSFET

A multi-gate n-type In(0.53)Ga(0.47)As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al(2)O(3) oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device par...

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Detalles Bibliográficos
Autores principales: Mohd Razip Wee, Mohd F., Dehzangi, Arash, Bollaert, Sylvain, Wichmann, Nicolas, Majlis, Burhanuddin Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2013
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867396/
https://www.ncbi.nlm.nih.gov/pubmed/24367548
http://dx.doi.org/10.1371/journal.pone.0082731

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867396/
https://www.ncbi.nlm.nih.gov/pubmed/24367548
http://dx.doi.org/10.1371/journal.pone.0082731

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