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Gate Length Variation Effect on Performance of Gate-First Self-Aligned In(0.53)Ga(0.47)As MOSFET
A multi-gate n-type In(0.53)Ga(0.47)As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al(2)O(3) oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device par...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Public Library of Science
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867396/ https://www.ncbi.nlm.nih.gov/pubmed/24367548 http://dx.doi.org/10.1371/journal.pone.0082731 |