Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is bene...

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Detalles Bibliográficos
Autores principales: Zheng, Changda, Wang, Li, Mo, Chunlan, Fang, Wenqing, Jiang, Fengyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2013
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867827/
https://www.ncbi.nlm.nih.gov/pubmed/24369453
http://dx.doi.org/10.1155/2013/538297

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867827/
https://www.ncbi.nlm.nih.gov/pubmed/24369453
http://dx.doi.org/10.1155/2013/538297

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