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Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is bene...

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Detalles Bibliográficos
Autores principales: Zheng, Changda, Wang, Li, Mo, Chunlan, Fang, Wenqing, Jiang, Fengyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867827/
https://www.ncbi.nlm.nih.gov/pubmed/24369453
http://dx.doi.org/10.1155/2013/538297
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author Zheng, Changda
Wang, Li
Mo, Chunlan
Fang, Wenqing
Jiang, Fengyi
author_facet Zheng, Changda
Wang, Li
Mo, Chunlan
Fang, Wenqing
Jiang, Fengyi
author_sort Zheng, Changda
collection PubMed
description GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.
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spelling pubmed-38678272013-12-25 Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate Zheng, Changda Wang, Li Mo, Chunlan Fang, Wenqing Jiang, Fengyi ScientificWorldJournal Research Article GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow. Hindawi Publishing Corporation 2013-12-04 /pmc/articles/PMC3867827/ /pubmed/24369453 http://dx.doi.org/10.1155/2013/538297 Text en Copyright © 2013 Changda Zheng et al. https://creativecommons.org/licenses/by/3.0/ This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Article
Zheng, Changda
Wang, Li
Mo, Chunlan
Fang, Wenqing
Jiang, Fengyi
Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
title Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
title_full Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
title_fullStr Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
title_full_unstemmed Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
title_short Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
title_sort effect of same-temperature gan cap layer on the ingan/gan multiquantum well of green light-emitting diode on silicon substrate
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867827/
https://www.ncbi.nlm.nih.gov/pubmed/24369453
http://dx.doi.org/10.1155/2013/538297
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