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Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is bene...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Hindawi Publishing Corporation
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867827/ https://www.ncbi.nlm.nih.gov/pubmed/24369453 http://dx.doi.org/10.1155/2013/538297 |
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author | Zheng, Changda Wang, Li Mo, Chunlan Fang, Wenqing Jiang, Fengyi |
author_facet | Zheng, Changda Wang, Li Mo, Chunlan Fang, Wenqing Jiang, Fengyi |
author_sort | Zheng, Changda |
collection | PubMed |
description | GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow. |
format | Online Article Text |
id | pubmed-3867827 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Hindawi Publishing Corporation |
record_format | MEDLINE/PubMed |
spelling | pubmed-38678272013-12-25 Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate Zheng, Changda Wang, Li Mo, Chunlan Fang, Wenqing Jiang, Fengyi ScientificWorldJournal Research Article GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow. Hindawi Publishing Corporation 2013-12-04 /pmc/articles/PMC3867827/ /pubmed/24369453 http://dx.doi.org/10.1155/2013/538297 Text en Copyright © 2013 Changda Zheng et al. https://creativecommons.org/licenses/by/3.0/ This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Article Zheng, Changda Wang, Li Mo, Chunlan Fang, Wenqing Jiang, Fengyi Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate |
title | Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate |
title_full | Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate |
title_fullStr | Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate |
title_full_unstemmed | Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate |
title_short | Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate |
title_sort | effect of same-temperature gan cap layer on the ingan/gan multiquantum well of green light-emitting diode on silicon substrate |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3867827/ https://www.ncbi.nlm.nih.gov/pubmed/24369453 http://dx.doi.org/10.1155/2013/538297 |
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