Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al(2)O(3)-films

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al(2)O(3)) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al(2)O(3) layers were deposited at 200 °C,...

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Detalles Bibliográficos
Autores principales: Haeberle, Jörg, Henkel, Karsten, Gargouri, Hassan, Naumann, Franziska, Gruska, Bernd, Arens, Michael, Tallarida, Massimo, Schmeißer, Dieter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2013
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3869373/
https://www.ncbi.nlm.nih.gov/pubmed/24367741
http://dx.doi.org/10.3762/bjnano.4.83

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3869373/
https://www.ncbi.nlm.nih.gov/pubmed/24367741
http://dx.doi.org/10.3762/bjnano.4.83

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