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Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al(2)O(3)-films
We report on results on the preparation of thin (<100 nm) aluminum oxide (Al(2)O(3)) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al(2)O(3) layers were deposited at 200 °C,...
Autores principales: | Haeberle, Jörg, Henkel, Karsten, Gargouri, Hassan, Naumann, Franziska, Gruska, Bernd, Arens, Michael, Tallarida, Massimo, Schmeißer, Dieter |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3869373/ https://www.ncbi.nlm.nih.gov/pubmed/24367741 http://dx.doi.org/10.3762/bjnano.4.83 |
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