Scanning X-ray strain microscopy of inhomogeneously strained Ge micro-bridges

Strained semiconductors are ubiquitous in microelectronics and microelectromechanical systems, where high local stress levels can either be detrimental for their integrity or enhance their performance. Consequently, local probes for elastic strain are essential in analyzing such devices. Here, a sca...

Descripción completa

Detalles Bibliográficos
Autores principales: Etzelstorfer, Tanja, Süess, Martin J., Schiefler, Gustav L., Jacques, Vincent L. R., Carbone, Dina, Chrastina, Daniel, Isella, Giovanni, Spolenak, Ralph, Stangl, Julian, Sigg, Hans, Diaz, Ana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2014
Materias:
Research Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3874020/
https://www.ncbi.nlm.nih.gov/pubmed/24365924
http://dx.doi.org/10.1107/S1600577513025459

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3874020/
https://www.ncbi.nlm.nih.gov/pubmed/24365924
http://dx.doi.org/10.1107/S1600577513025459

Ejemplares similares