High performance of graphene oxide-doped silicon oxide-based resistance random access memory

In this letter, a double active layer (Zr:SiO( x )/C:SiO( x )) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM de...

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Detalles Bibliográficos
Autores principales: Zhang, Rui, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Lou, Jen-Chung, Chen, Jung-Hui, Young, Tai-Fa, Shih, Chih-Cheng, Yang, Ya-Liang, Pan, Yin-Chih, Chu, Tian-Jian, Huang, Syuan-Yong, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Sze, Simon M
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3874615/
https://www.ncbi.nlm.nih.gov/pubmed/24261454
http://dx.doi.org/10.1186/1556-276X-8-497

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3874615/
https://www.ncbi.nlm.nih.gov/pubmed/24261454
http://dx.doi.org/10.1186/1556-276X-8-497

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