Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

In this review we discuss the advances in use of GaN and ZnO-based solid-state sensors for gas sensing applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization -induced two dimensional electron gas (2DEG). F...

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Detalles Bibliográficos
Autores principales: Kang, Byoung Sam, Wang, Hung-Ta, Tien, Li- Chia, Ren, Fan, Gila, Brent P., Norton, David P., Abernathy, Cammy R., Lin, Jenshan, Pearton, Stepehn J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2006
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3874828/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3874828/

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