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Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors
In this review we discuss the advances in use of GaN and ZnO-based solid-state sensors for gas sensing applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization -induced two dimensional electron gas (2DEG). F...
Autores principales: | Kang, Byoung Sam, Wang, Hung-Ta, Tien, Li- Chia, Ren, Fan, Gila, Brent P., Norton, David P., Abernathy, Cammy R., Lin, Jenshan, Pearton, Stepehn J. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Molecular Diversity Preservation International (MDPI)
2006
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3874828/ |
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