Self-compliance-improved resistive switching using Ir/TaO(x)/W cross-point memory

Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaO( x )/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and mor...

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Detalles Bibliográficos
Autores principales: Prakash, Amit, Jana, Debanjan, Samanta, Subhranu, Maikap, Siddheswar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3878451/
https://www.ncbi.nlm.nih.gov/pubmed/24341544
http://dx.doi.org/10.1186/1556-276X-8-527

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3878451/
https://www.ncbi.nlm.nih.gov/pubmed/24341544
http://dx.doi.org/10.1186/1556-276X-8-527

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