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Self-compliance-improved resistive switching using Ir/TaO(x)/W cross-point memory
Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaO( x )/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and mor...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3878451/ https://www.ncbi.nlm.nih.gov/pubmed/24341544 http://dx.doi.org/10.1186/1556-276X-8-527 |