Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) device...

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Detalles Bibliográficos
Autores principales: Huang, Hsin-Wei, Kang, Chen-Fang, Lai, Fang-I, He, Jr-Hau, Lin, Su-Jien, Chueh, Yu-Lun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3879181/
https://www.ncbi.nlm.nih.gov/pubmed/24237683
http://dx.doi.org/10.1186/1556-276X-8-483

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3879181/
https://www.ncbi.nlm.nih.gov/pubmed/24237683
http://dx.doi.org/10.1186/1556-276X-8-483

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