Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) device...

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Detalles Bibliográficos
Autores principales: Huang, Hsin-Wei, Kang, Chen-Fang, Lai, Fang-I, He, Jr-Hau, Lin, Su-Jien, Chueh, Yu-Lun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3879181/
https://www.ncbi.nlm.nih.gov/pubmed/24237683
http://dx.doi.org/10.1186/1556-276X-8-483
Descripción
Sumario:We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O(2) pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O(2) pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.

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