Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires

Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires m...

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Detalles Bibliográficos
Autores principales: Fabbri, Filippo, Rotunno, Enzo, Lazzarini, Laura, Fukata, Naoki, Salviati, Giancarlo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3884225/
https://www.ncbi.nlm.nih.gov/pubmed/24398782
http://dx.doi.org/10.1038/srep03603

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3884225/
https://www.ncbi.nlm.nih.gov/pubmed/24398782
http://dx.doi.org/10.1038/srep03603

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