Gold-Free Ternary III–V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

[Image: see text] With the continued maturation of III–V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-contr...

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Detalles Bibliográficos
Autores principales: Conesa-Boj, Sònia, Kriegner, Dominik, Han, Xiang-Lei, Plissard, Sébastien, Wallart, Xavier, Stangl, Julian, Fontcuberta i Morral, Anna, Caroff, Philippe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2013
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3890218/
https://www.ncbi.nlm.nih.gov/pubmed/24329502
http://dx.doi.org/10.1021/nl404085a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3890218/
https://www.ncbi.nlm.nih.gov/pubmed/24329502
http://dx.doi.org/10.1021/nl404085a

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