Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (...

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Detalles Bibliográficos
Autores principales: Boufouss, El Hafed, Francis, Laurent A., Kilchytska, Valeriya, Gérard, Pierre, Simon, Pascal, Flandre, Denis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3892812/
https://www.ncbi.nlm.nih.gov/pubmed/24351635
http://dx.doi.org/10.3390/s131217265

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3892812/
https://www.ncbi.nlm.nih.gov/pubmed/24351635
http://dx.doi.org/10.3390/s131217265

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