Resistive switching behavior in Lu(2)O(3) thin film for advanced flexible memory applications

In this article, the resistive switching (RS) behaviors in Lu(2)O(3) thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu(2)O(3) thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polye...

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Detalles Bibliográficos
Autores principales: Mondal, Somnath, Her, Jim-Long, Koyama, Keiichi, Pan, Tung-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3895690/
https://www.ncbi.nlm.nih.gov/pubmed/24387704
http://dx.doi.org/10.1186/1556-276X-9-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3895690/
https://www.ncbi.nlm.nih.gov/pubmed/24387704
http://dx.doi.org/10.1186/1556-276X-9-3

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