Resistive switching behavior in Lu(2)O(3) thin film for advanced flexible memory applications

In this article, the resistive switching (RS) behaviors in Lu(2)O(3) thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu(2)O(3) thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu(2)O(3) thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu(2)O(3)/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu(2)O(3) thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu(2)O(3) thin film. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising applications in future advanced memory.