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Ferromagnetism and Ru-Ru distance in SrRuO(3) thin film grown on SrTiO(3) (111) substrate

Epitaxial SrRuO(3) thin films were grown on both (100) and (111) SrTiO(3) substrates with atomically flat surfaces that are required to grow high-quality films of materials under debate. The following notable differences were observed in the (111)-oriented SrRuO(3) films: (1) slightly different grow...

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Detalles Bibliográficos
Autores principales: Lee, Bowha, Kwon, O-Ung, Shin, Ran Hee, Jo, William, Jung, Chang Uk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3895815/
https://www.ncbi.nlm.nih.gov/pubmed/24393495
http://dx.doi.org/10.1186/1556-276X-9-8
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author Lee, Bowha
Kwon, O-Ung
Shin, Ran Hee
Jo, William
Jung, Chang Uk
author_facet Lee, Bowha
Kwon, O-Ung
Shin, Ran Hee
Jo, William
Jung, Chang Uk
author_sort Lee, Bowha
collection PubMed
description Epitaxial SrRuO(3) thin films were grown on both (100) and (111) SrTiO(3) substrates with atomically flat surfaces that are required to grow high-quality films of materials under debate. The following notable differences were observed in the (111)-oriented SrRuO(3) films: (1) slightly different growth mode, (2) approximately 10 K higher ferromagnetic transition temperature, and (3) better conducting behavior with higher relative resistivity ratio, than (100)(c)-oriented SrRuO(3) films. Together with the reported results on SrRuO(3) thin films grown on (110) SrTiO(3) substrate, the different physical properties were discussed newly in terms of the Ru-Ru nearest neighbor distance instead of the famous tolerance factor. PACS: 75.70.Ak; 75.60.Ej; 81.15.Fg
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spelling pubmed-38958152014-01-24 Ferromagnetism and Ru-Ru distance in SrRuO(3) thin film grown on SrTiO(3) (111) substrate Lee, Bowha Kwon, O-Ung Shin, Ran Hee Jo, William Jung, Chang Uk Nanoscale Res Lett Nano Commentary Epitaxial SrRuO(3) thin films were grown on both (100) and (111) SrTiO(3) substrates with atomically flat surfaces that are required to grow high-quality films of materials under debate. The following notable differences were observed in the (111)-oriented SrRuO(3) films: (1) slightly different growth mode, (2) approximately 10 K higher ferromagnetic transition temperature, and (3) better conducting behavior with higher relative resistivity ratio, than (100)(c)-oriented SrRuO(3) films. Together with the reported results on SrRuO(3) thin films grown on (110) SrTiO(3) substrate, the different physical properties were discussed newly in terms of the Ru-Ru nearest neighbor distance instead of the famous tolerance factor. PACS: 75.70.Ak; 75.60.Ej; 81.15.Fg Springer 2014-01-07 /pmc/articles/PMC3895815/ /pubmed/24393495 http://dx.doi.org/10.1186/1556-276X-9-8 Text en Copyright © 2014 Lee et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Commentary
Lee, Bowha
Kwon, O-Ung
Shin, Ran Hee
Jo, William
Jung, Chang Uk
Ferromagnetism and Ru-Ru distance in SrRuO(3) thin film grown on SrTiO(3) (111) substrate
title Ferromagnetism and Ru-Ru distance in SrRuO(3) thin film grown on SrTiO(3) (111) substrate
title_full Ferromagnetism and Ru-Ru distance in SrRuO(3) thin film grown on SrTiO(3) (111) substrate
title_fullStr Ferromagnetism and Ru-Ru distance in SrRuO(3) thin film grown on SrTiO(3) (111) substrate
title_full_unstemmed Ferromagnetism and Ru-Ru distance in SrRuO(3) thin film grown on SrTiO(3) (111) substrate
title_short Ferromagnetism and Ru-Ru distance in SrRuO(3) thin film grown on SrTiO(3) (111) substrate
title_sort ferromagnetism and ru-ru distance in srruo(3) thin film grown on srtio(3) (111) substrate
topic Nano Commentary
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3895815/
https://www.ncbi.nlm.nih.gov/pubmed/24393495
http://dx.doi.org/10.1186/1556-276X-9-8
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