Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit two distinct regions and a varying Bi composition profile in the growth direction. In the low...

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Detalles Bibliográficos
Autores principales: Reyes, Daniel F, Bastiman, Faebian, Hunter, Chris J, Sales, David L, Sanchez, Ana M, David, John P R, González, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3896832/
https://www.ncbi.nlm.nih.gov/pubmed/24417864
http://dx.doi.org/10.1186/1556-276X-9-23

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3896832/
https://www.ncbi.nlm.nih.gov/pubmed/24417864
http://dx.doi.org/10.1186/1556-276X-9-23

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