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Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit two distinct regions and a varying Bi composition profile in the growth direction. In the low...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3896832/ https://www.ncbi.nlm.nih.gov/pubmed/24417864 http://dx.doi.org/10.1186/1556-276X-9-23 |