Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO(x)/GdO(x)/W cross-point memories

Enhanced resistive switching phenomena of IrO(x)/GdO(x)/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd(2)O(3) films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron micr...

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Detalles Bibliográficos
Autores principales: Jana, Debanjan, Maikap, Siddheswar, Prakash, Amit, Chen, Yi-Yan, Chiu, Hsien-Chin, Yang, Jer-Ren
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3896962/
https://www.ncbi.nlm.nih.gov/pubmed/24400888
http://dx.doi.org/10.1186/1556-276X-9-12

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3896962/
https://www.ncbi.nlm.nih.gov/pubmed/24400888
http://dx.doi.org/10.1186/1556-276X-9-12

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