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Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO(x)/GdO(x)/W cross-point memories
Enhanced resistive switching phenomena of IrO(x)/GdO(x)/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd(2)O(3) films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron micr...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3896962/ https://www.ncbi.nlm.nih.gov/pubmed/24400888 http://dx.doi.org/10.1186/1556-276X-9-12 |