Ga(0.35)In(0.65) N(0.02)As(0.08)/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical-cavity semiconductor optical amplifier (THH-VCSOA) is a bidirectional light-emitting and light-absorbing heterojunction device. The device contains 11 Ga(0.35)In(0.65) N(0.02)As(0.08)/GaAs MQWs in...

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Detalles Bibliográficos
Autores principales: Chaqmaqchee, Faten Adel Ismael, Balkan, Naci
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3897988/
https://www.ncbi.nlm.nih.gov/pubmed/24438583
http://dx.doi.org/10.1186/1556-276X-9-37

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3897988/
https://www.ncbi.nlm.nih.gov/pubmed/24438583
http://dx.doi.org/10.1186/1556-276X-9-37

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