Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, re...

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Detalles Bibliográficos
Autores principales: Utrilla, Antonio D, Ulloa, Jose M, Guzman, Alvaro, Hierro, Adrian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902421/
https://www.ncbi.nlm.nih.gov/pubmed/24438542
http://dx.doi.org/10.1186/1556-276X-9-36

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902421/
https://www.ncbi.nlm.nih.gov/pubmed/24438542
http://dx.doi.org/10.1186/1556-276X-9-36

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