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Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, re...
Autores principales: | Utrilla, Antonio D, Ulloa, Jose M, Guzman, Alvaro, Hierro, Adrian |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902421/ https://www.ncbi.nlm.nih.gov/pubmed/24438542 http://dx.doi.org/10.1186/1556-276X-9-36 |
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