Formation of perfect ohmic contact at indium tin oxide/N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine interface using ReO(3)

A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB) using ReO(3) as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1...

Descripción completa

Detalles Bibliográficos
Autores principales: Yoo, Seung-Jun, Chang, Jung-Hung, Lee, Jeong-Hwan, Moon, Chang-Ki, Wu, Chih-I, Kim, Jang-Joo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3904154/
https://www.ncbi.nlm.nih.gov/pubmed/24469505
http://dx.doi.org/10.1038/srep03902

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3904154/
https://www.ncbi.nlm.nih.gov/pubmed/24469505
http://dx.doi.org/10.1038/srep03902

Ejemplares similares