Automatic Release of Silicon Nanowire Arrays with a High Integrity for Flexible Electronic Devices

Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H(2)O(2) and ammonia etching to form a SiO(x) protective layer sheathing Si nan...

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Detalles Bibliográficos
Autores principales: Wu, Luo, Li, Shuxin, He, Weiwei, Teng, Dayong, Wang, Ke, Ye, Changhui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3909900/
https://www.ncbi.nlm.nih.gov/pubmed/24487460
http://dx.doi.org/10.1038/srep03940

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3909900/
https://www.ncbi.nlm.nih.gov/pubmed/24487460
http://dx.doi.org/10.1038/srep03940

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