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Field-effect transistors based on cubic indium nitride
Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high car...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3912472/ https://www.ncbi.nlm.nih.gov/pubmed/24492240 http://dx.doi.org/10.1038/srep03951 |