High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

[Image: see text] Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or...

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Detalles Bibliográficos
Autores principales: Banger, Kulbinder K., Peterson, Rebecca L., Mori, Kiyotaka, Yamashita, Yoshihisa, Leedham, Timothy, Sirringhaus, Henning
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2013
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3914394/
https://www.ncbi.nlm.nih.gov/pubmed/24511184
http://dx.doi.org/10.1021/cm4035837

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3914394/
https://www.ncbi.nlm.nih.gov/pubmed/24511184
http://dx.doi.org/10.1021/cm4035837

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