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Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35−x)Se(65) thin films
In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a-Ge(x)As(35−x)Se(65) thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two p...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3916963/ https://www.ncbi.nlm.nih.gov/pubmed/24504158 http://dx.doi.org/10.1038/srep04029 |