Cargando…
Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35−x)Se(65) thin films
In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a-Ge(x)As(35−x)Se(65) thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two p...
Autores principales: | Khan, Pritam, Jain, H., Adarsh, K. V. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3916963/ https://www.ncbi.nlm.nih.gov/pubmed/24504158 http://dx.doi.org/10.1038/srep04029 |
Ejemplares similares
-
Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge(5)As(30)Se(65) thin film
por: Khan, Pritam, et al.
Publicado: (2014) -
Observation of high nonlinearity in Bi doped Bi(x)In(35-x)Se(65) thin films with annealing
por: Priyadarshini, P., et al.
Publicado: (2021) -
Synthesis of Ge(1−x)Sn(x) Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates
por: Mahmodi, Hadi, et al.
Publicado: (2018) -
Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe(2) thin film
por: Barik, A. R., et al.
Publicado: (2014) -
Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide Ge(x)As(y)Se(1−x−y) Thin Films by In Situ Measurements
por: Su, Xueqiong, et al.
Publicado: (2021)