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Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35−x)Se(65) thin films

In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a-Ge(x)As(35−x)Se(65) thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two p...

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Detalles Bibliográficos
Autores principales: Khan, Pritam, Jain, H., Adarsh, K. V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3916963/
https://www.ncbi.nlm.nih.gov/pubmed/24504158
http://dx.doi.org/10.1038/srep04029

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