Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total in...

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Detalles Bibliográficos
Autor principal: Ryu, Han-Youl
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3917593/
https://www.ncbi.nlm.nih.gov/pubmed/24495598
http://dx.doi.org/10.1186/1556-276X-9-58

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3917593/
https://www.ncbi.nlm.nih.gov/pubmed/24495598
http://dx.doi.org/10.1186/1556-276X-9-58

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