Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS(2) and ambipolar WSe(2) FETs (i) at...

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Detalles Bibliográficos
Autores principales: Li, Hua-Min, Lee, Dae-Yeong, Choi, Min Sup, Qu, Deshun, Liu, Xiaochi, Ra, Chang-Ho, Yoo, Won Jong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3918928/
https://www.ncbi.nlm.nih.gov/pubmed/24509565
http://dx.doi.org/10.1038/srep04041

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3918928/
https://www.ncbi.nlm.nih.gov/pubmed/24509565
http://dx.doi.org/10.1038/srep04041

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