The Effect of Dielectric Constants on Noble Metal/Semiconductor SERS Enhancement: FDTD Simulation and Experiment Validation of Ag/Ge and Ag/Si Substrates

The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the dif...

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Detalles Bibliográficos
Autores principales: Wang, Tao, Zhang, Zhaoshun, Liao, Fan, Cai, Qian, Li, Yanqing, Lee, Shuit-Tong, Shao, Mingwang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3920278/
https://www.ncbi.nlm.nih.gov/pubmed/24514430
http://dx.doi.org/10.1038/srep04052

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3920278/
https://www.ncbi.nlm.nih.gov/pubmed/24514430
http://dx.doi.org/10.1038/srep04052

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