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The Effect of Dielectric Constants on Noble Metal/Semiconductor SERS Enhancement: FDTD Simulation and Experiment Validation of Ag/Ge and Ag/Si Substrates
The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the dif...
Autores principales: | Wang, Tao, Zhang, Zhaoshun, Liao, Fan, Cai, Qian, Li, Yanqing, Lee, Shuit-Tong, Shao, Mingwang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3920278/ https://www.ncbi.nlm.nih.gov/pubmed/24514430 http://dx.doi.org/10.1038/srep04052 |
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