Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox m...

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Detalles Bibliográficos
Autores principales: Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3922695/
https://www.ncbi.nlm.nih.gov/pubmed/24475979
http://dx.doi.org/10.1186/1556-276X-9-52

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3922695/
https://www.ncbi.nlm.nih.gov/pubmed/24475979
http://dx.doi.org/10.1186/1556-276X-9-52

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