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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox m...
| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3922695/ https://www.ncbi.nlm.nih.gov/pubmed/24475979 http://dx.doi.org/10.1186/1556-276X-9-52 |
| _version_ | 1782303488748814336 |
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| author | Chen, Yi-Jiun Chen, Hsin-Lu Young, Tai-Fa Chang, Ting-Chang Tsai, Tsung-Ming Chang, Kuan-Chang Zhang, Rui Chen, Kai-Huang Lou, Jen-Chung Chu, Tian-Jian Chen, Jung-Hui Bao, Ding-Hua Sze, Simon M |
| author_facet | Chen, Yi-Jiun Chen, Hsin-Lu Young, Tai-Fa Chang, Ting-Chang Tsai, Tsung-Ming Chang, Kuan-Chang Zhang, Rui Chen, Kai-Huang Lou, Jen-Chung Chu, Tian-Jian Chen, Jung-Hui Bao, Ding-Hua Sze, Simon M |
| author_sort | Chen, Yi-Jiun |
| collection | PubMed |
| description | We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp(2) carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp(3)-type carbon filament through hydrogenation process. |
| format | Online Article Text |
| id | pubmed-3922695 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2014 |
| publisher | Springer |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-39226952014-02-20 Hydrogen induced redox mechanism in amorphous carbon resistive random access memory Chen, Yi-Jiun Chen, Hsin-Lu Young, Tai-Fa Chang, Ting-Chang Tsai, Tsung-Ming Chang, Kuan-Chang Zhang, Rui Chen, Kai-Huang Lou, Jen-Chung Chu, Tian-Jian Chen, Jung-Hui Bao, Ding-Hua Sze, Simon M Nanoscale Res Lett Nano Express We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp(2) carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp(3)-type carbon filament through hydrogenation process. Springer 2014-01-29 /pmc/articles/PMC3922695/ /pubmed/24475979 http://dx.doi.org/10.1186/1556-276X-9-52 Text en Copyright © 2014 Chen et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. |
| spellingShingle | Nano Express Chen, Yi-Jiun Chen, Hsin-Lu Young, Tai-Fa Chang, Ting-Chang Tsai, Tsung-Ming Chang, Kuan-Chang Zhang, Rui Chen, Kai-Huang Lou, Jen-Chung Chu, Tian-Jian Chen, Jung-Hui Bao, Ding-Hua Sze, Simon M Hydrogen induced redox mechanism in amorphous carbon resistive random access memory |
| title | Hydrogen induced redox mechanism in amorphous carbon resistive random access memory |
| title_full | Hydrogen induced redox mechanism in amorphous carbon resistive random access memory |
| title_fullStr | Hydrogen induced redox mechanism in amorphous carbon resistive random access memory |
| title_full_unstemmed | Hydrogen induced redox mechanism in amorphous carbon resistive random access memory |
| title_short | Hydrogen induced redox mechanism in amorphous carbon resistive random access memory |
| title_sort | hydrogen induced redox mechanism in amorphous carbon resistive random access memory |
| topic | Nano Express |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3922695/ https://www.ncbi.nlm.nih.gov/pubmed/24475979 http://dx.doi.org/10.1186/1556-276X-9-52 |
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