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Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1−x)Bi(x) and InSb(1−x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E (+) levels move upwards in energy with an increase in Bi conten...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Hindawi Publishing Corporation
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3925516/ https://www.ncbi.nlm.nih.gov/pubmed/24592181 http://dx.doi.org/10.1155/2014/704830 |