Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1−x)Bi(x) and InSb(1−x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E (+) levels move upwards in energy with an increase in Bi conten...

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Detalles Bibliográficos
Autores principales: Samajdar, D. P., Dhar, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2014
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3925516/
https://www.ncbi.nlm.nih.gov/pubmed/24592181
http://dx.doi.org/10.1155/2014/704830
Descripción
Sumario:The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1−x)Bi(x) and InSb(1−x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E (+) levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E (−) energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

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