Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1−x)Bi(x) and InSb(1−x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E (+) levels move upwards in energy with an increase in Bi conten...

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Detalles Bibliográficos
Autores principales: Samajdar, D. P., Dhar, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2014
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3925516/
https://www.ncbi.nlm.nih.gov/pubmed/24592181
http://dx.doi.org/10.1155/2014/704830
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author Samajdar, D. P.
Dhar, S.
author_facet Samajdar, D. P.
Dhar, S.
author_sort Samajdar, D. P.
collection PubMed
description The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1−x)Bi(x) and InSb(1−x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E (+) levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E (−) energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.
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spelling pubmed-39255162014-03-03 Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model Samajdar, D. P. Dhar, S. ScientificWorldJournal Research Article The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1−x)Bi(x) and InSb(1−x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E (+) levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E (−) energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. Hindawi Publishing Corporation 2014-01-29 /pmc/articles/PMC3925516/ /pubmed/24592181 http://dx.doi.org/10.1155/2014/704830 Text en Copyright © 2014 D. P. Samajdar and S. Dhar. https://creativecommons.org/licenses/by/3.0/ This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Article
Samajdar, D. P.
Dhar, S.
Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
title Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
title_full Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
title_fullStr Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
title_full_unstemmed Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
title_short Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
title_sort valence band structure of inas(1−x)bi(x) and insb(1−x)bi(x) alloy semiconductors calculated using valence band anticrossing model
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3925516/
https://www.ncbi.nlm.nih.gov/pubmed/24592181
http://dx.doi.org/10.1155/2014/704830
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