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Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1−x)Bi(x) and InSb(1−x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E (+) levels move upwards in energy with an increase in Bi conten...

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Detalles Bibliográficos
Autores principales:	Samajdar, D. P., Dhar, S.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Hindawi Publishing Corporation 2014
Materias:	Research Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3925516/ https://www.ncbi.nlm.nih.gov/pubmed/24592181 http://dx.doi.org/10.1155/2014/704830

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