Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decr...

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Detalles Bibliográficos
Autores principales: Yamada, Shigeru, Kurokawa, Yasuyoshi, Miyajima, Shinsuke, Konagai, Makoto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3926976/
https://www.ncbi.nlm.nih.gov/pubmed/24521208
http://dx.doi.org/10.1186/1556-276X-9-72

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3926976/
https://www.ncbi.nlm.nih.gov/pubmed/24521208
http://dx.doi.org/10.1186/1556-276X-9-72

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