Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decr...

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Detalles Bibliográficos
Autores principales: Yamada, Shigeru, Kurokawa, Yasuyoshi, Miyajima, Shinsuke, Konagai, Makoto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3926976/
https://www.ncbi.nlm.nih.gov/pubmed/24521208
http://dx.doi.org/10.1186/1556-276X-9-72
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author Yamada, Shigeru
Kurokawa, Yasuyoshi
Miyajima, Shinsuke
Konagai, Makoto
author_facet Yamada, Shigeru
Kurokawa, Yasuyoshi
Miyajima, Shinsuke
Konagai, Makoto
author_sort Yamada, Shigeru
collection PubMed
description We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 10(19) cm(-3) to 3.7 × 10(17) cm(-3), which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.
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spelling pubmed-39269762014-08-11 Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix Yamada, Shigeru Kurokawa, Yasuyoshi Miyajima, Shinsuke Konagai, Makoto Nanoscale Res Lett Nano Express We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 10(19) cm(-3) to 3.7 × 10(17) cm(-3), which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching. Springer 2014-02-12 /pmc/articles/PMC3926976/ /pubmed/24521208 http://dx.doi.org/10.1186/1556-276X-9-72 Text en Copyright © 2014 Yamada et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Yamada, Shigeru
Kurokawa, Yasuyoshi
Miyajima, Shinsuke
Konagai, Makoto
Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
title Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
title_full Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
title_fullStr Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
title_full_unstemmed Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
title_short Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
title_sort investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3926976/
https://www.ncbi.nlm.nih.gov/pubmed/24521208
http://dx.doi.org/10.1186/1556-276X-9-72
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