Forming-free bipolar resistive switching in nonstoichiometric ceria films

The mechanism of forming-free bipolar resistive switching in a Zr/CeO( x )/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrO( y ) layer at the Zr/CeO( x ) interface. X-ray diffraction studies of C...

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Detalles Bibliográficos
Autores principales: Ismail, Muhammad, Huang, Chun-Yang, Panda, Debashis, Hung, Chung-Jung, Tsai, Tsung-Ling, Jieng, Jheng-Hong, Lin, Chun-An, Chand, Umesh, Rana, Anwar Manzoor, Ahmed, Ejaz, Talib, Ijaz, Nadeem, Muhammad Younus, Tseng, Tseung-Yuen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3927661/
https://www.ncbi.nlm.nih.gov/pubmed/24467984
http://dx.doi.org/10.1186/1556-276X-9-45

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3927661/
https://www.ncbi.nlm.nih.gov/pubmed/24467984
http://dx.doi.org/10.1186/1556-276X-9-45

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