Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress ha...

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Detalles Bibliográficos
Autores principales: Zhang, Lei, Yu, Jiaoxian, Hao, Xiaopeng, Wu, Yongzhong, Dai, Yuanbin, Shao, Yongliang, Zhang, Haodong, Tian, Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3935196/
https://www.ncbi.nlm.nih.gov/pubmed/24569601
http://dx.doi.org/10.1038/srep04179

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3935196/
https://www.ncbi.nlm.nih.gov/pubmed/24569601
http://dx.doi.org/10.1038/srep04179

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