Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress ha...

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Detalles Bibliográficos
Autores principales: Zhang, Lei, Yu, Jiaoxian, Hao, Xiaopeng, Wu, Yongzhong, Dai, Yuanbin, Shao, Yongliang, Zhang, Haodong, Tian, Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3935196/
https://www.ncbi.nlm.nih.gov/pubmed/24569601
http://dx.doi.org/10.1038/srep04179
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author Zhang, Lei
Yu, Jiaoxian
Hao, Xiaopeng
Wu, Yongzhong
Dai, Yuanbin
Shao, Yongliang
Zhang, Haodong
Tian, Yuan
author_facet Zhang, Lei
Yu, Jiaoxian
Hao, Xiaopeng
Wu, Yongzhong
Dai, Yuanbin
Shao, Yongliang
Zhang, Haodong
Tian, Yuan
author_sort Zhang, Lei
collection PubMed
description GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress.
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spelling pubmed-39351962014-02-26 Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate Zhang, Lei Yu, Jiaoxian Hao, Xiaopeng Wu, Yongzhong Dai, Yuanbin Shao, Yongliang Zhang, Haodong Tian, Yuan Sci Rep Article GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress. Nature Publishing Group 2014-02-26 /pmc/articles/PMC3935196/ /pubmed/24569601 http://dx.doi.org/10.1038/srep04179 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/3.0/ This work is licensed under a Creative Commons Attribution 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/
spellingShingle Article
Zhang, Lei
Yu, Jiaoxian
Hao, Xiaopeng
Wu, Yongzhong
Dai, Yuanbin
Shao, Yongliang
Zhang, Haodong
Tian, Yuan
Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
title Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
title_full Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
title_fullStr Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
title_full_unstemmed Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
title_short Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
title_sort influence of stress in gan crystals grown by hvpe on mocvd-gan/6h-sic substrate
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3935196/
https://www.ncbi.nlm.nih.gov/pubmed/24569601
http://dx.doi.org/10.1038/srep04179
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