Quantum size effects in TiO(2) thin films grown by atomic layer deposition

We study the atomic layer deposition of TiO(2) by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H(2)O on Si/SiO(2) substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to f...

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Detalles Bibliográficos
Autores principales: Tallarida, Massimo, Das, Chittaranjan, Schmeisser, Dieter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2014
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3943868/
https://www.ncbi.nlm.nih.gov/pubmed/24605275
http://dx.doi.org/10.3762/bjnano.5.7
Descripción
Sumario:We study the atomic layer deposition of TiO(2) by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H(2)O on Si/SiO(2) substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO(2) in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

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